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    XGZP2406 series pressure sensor chips are designed and fabricated by MEMS technology on six inch silicon wafers in a class-100 clean room. The pressure sensing chip utilizes a piezoresistive Wheatstone bridge in a design that anodically bonds glass to a chemically etched silicon diaphragm.. Four piezo-resistors form a Wheatstone bridge structure. When the springy diaphragm is pressured, Wheatstone bridge produces a linear millivolt voltage signal that is proportional to input pressure. 

    Chip size is 2.4×2.4×0.62mm(0.094×0.094×0.024 in) for silicon bonding with glass.It provide a best-in-class operating temperature(-40--180’c)/(-40--356℉)and superior stability. 

    With good repeatability, linearity, stability and sensibility, XGZP2406 is also easy for users to calibrate output, thermal drift etc,. by using operational amplifier or integrated circuit.It’s applicable for fluid filled and isolated from measured media,and other simple packaged sensor.

XGZP2406 SOI Pressure Sensor Die


■ Ranges: 0~100kPa…5000kPa(0~15psi…725psi) 

■ Piezoresistive MEMS Technology 

■ SOI structure,Temp.Compensated. 

■ Solid state, High reliability 

■ Absolute,Gage Pressure 

■ Industry Level,Cost effective

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■ For Automotive electronics field, such as tire pressure gauge, MAP sensor etc. 

■ For Home appliance field, such as air compressor etc. 

■ For Hydraulic control, such as pump,submergence,fire control,dam etc,. 

■ For Industry field, such as oil,mine,electricity,high-speed railway etc,. 

■ For Other fields, such as environment monitoring, liquid level measurement, sport and fitness equipment,instruments and meters etc.

Pressure sensor  



XGZP2406 Sensor Die.pdf

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